Manufacturer Part Number
IPT60R050G7XTMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-Channel MOSFET transistor from Infineon's CoolMOS G7 series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 600 V
Maximum Gate-Source Voltage (Vgs) of ±20 V
Low On-Resistance (RDS(on)) of 50 mΩ at 15.9 A, 10 V
Continuous Drain Current (ID) of 44 A at 25°C (Tc)
Input Capacitance (Ciss) of 2670 pF at 400 V
Maximum Power Dissipation of 245 W at 25°C (Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
Excellent energy efficiency due to low RDS(on)
High voltage handling capability
Reliable and robust design for demanding applications
Suitable for high-frequency switching operations
Key Technical Parameters
N-Channel MOSFET
Vdss: 600 V
Vgs (Max): ±20 V
RDS(on) (Max): 50 mΩ @ 15.9 A, 10 V
ID (Continuous): 44 A @ 25°C (Tc)
Ciss (Max): 2670 pF @ 400 V
Power Dissipation (Max): 245 W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of electronic circuits and power conversion systems
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible Power Supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
The IPT60R050G7XTMA1 is an actively supported product in Infineon's CoolMOS G7 series.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses due to the low RDS(on)
Reliable and robust design for demanding applications
High voltage handling capability for versatile use in various power electronics systems
Suitable for high-frequency switching operations, enabling efficient power conversion
Trusted Infineon brand and quality assurance
