Manufacturer Part Number
IPT60R035CFD7XTMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET in PG-HSOF-8-1 package
Product Features and Performance
600V operating voltage
Ultra-low on-resistance of 35mΩ
High current capability up to 67A
Optimized gate charge for efficient switching
Robust avalanche capability
Product Advantages
Excellent efficiency in hard and soft switching applications
Reduced system size and cost
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 35mΩ
Continuous Drain Current (Id): 67A
Input Capacitance (Ciss): 4354pF
Power Dissipation (Ptot): 351W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environmental conditions (-55°C to 150°C)
Compatibility
Universal compatibility for various power conversion applications
Application Areas
Switching power supplies
Motor drives
Solar inverters
Telecommunication power systems
Product Lifecycle
Current product, no plans for discontinuation. Replacements and upgrades available.
Key Reasons to Choose
Ultra-low on-resistance for high efficiency
High current capability for compact design
Robust performance in harsh environments
Optimized switching characteristics for reliable operation
