Manufacturer Part Number
IPG20N10S4L35AATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a dual N-channel MOSFET transistor from Infineon's OptiMOS series, designed for automotive and industrial applications.
Product Features and Performance
2 N-Channel (Dual) MOSFET configuration
100V Drain-to-Source Voltage (Vdss)
35mOhm maximum On-state Resistance (Rds(on)) at 17A, 10V
20A continuous Drain Current (Id) at 25°C
1105pF maximum Input Capacitance (Ciss) at 25V
1V maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 16A
4nC maximum Gate Charge (Qg) at 10V
Product Advantages
High power density and efficiency
Automotive-grade quality and reliability
Enhanced thermal management
Optimized for switching applications
Key Technical Parameters
MOSFET Technology
8-PowerVDFN Package
-55°C to 175°C Operating Temperature Range
43W Maximum Power Dissipation
Quality and Safety Features
AEC-Q101 qualified
RoHS3 compliant
Compatibility
This MOSFET is compatible with a wide range of automotive and industrial applications.
Application Areas
Motor control
Power supplies
Inverters
Converters
Industrial automation
Automotive electronics
Product Lifecycle
This product is in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon.
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust automotive-grade quality
Optimized for switching applications
Compact and versatile package
Wide operating temperature range
Extensive application compatibility
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