Manufacturer Part Number
IPG20N10S436AATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
N-Channel MOSFET
Dual Configuration
100V Drain to Source Voltage
36mOhm On-Resistance
20A Continuous Drain Current
990pF Input Capacitance
15nC Gate Charge
Product Advantages
Automotive Grade (AEC-Q101)
Wide Operating Temperature Range (-55°C to 175°C)
Low On-Resistance
High Current Capability
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 36mOhm
Continuous Drain Current (Id): 20A
Input Capacitance (Ciss): 990pF
Gate Charge (Qg): 15nC
Quality and Safety Features
RoHS3 Compliant
Wettable Flank Surface Mount Packaging
Compatibility
Suitable for Automotive and Industrial Applications
Application Areas
Power Conversion
Motor Control
Switching Circuits
Product Lifecycle
Current Product
Replacement or Upgrade Options Available
Key Reasons to Choose This Product
Automotive Grade Reliability
Low On-Resistance for Efficient Power Conversion
High Current Capability for Demanding Applications
Wide Operating Temperature Range for Harsh Environments
Compact Surface Mount Packaging for Space-Constrained Designs
IPG20N06S4L26Freescale / NXP Semiconductors