IPG20N06S4L26AATMA1 - Infineon Technologies

Manufacturer Part Number

IPG20N06S4L26AATMA1

Manufacturer

Infineon Technologies

Introduction

This is a dual N-channel MOSFET transistor from Infineon's OptiMOS series, designed for automotive and industrial applications.

Product Features and Performance

60V drain-to-source voltage rating

26mΩ maximum on-resistance at 17A, 10V

20A continuous drain current at 25°C

1430pF maximum input capacitance at 25V

Logic-level gate with 2.2V maximum gate threshold voltage at 10A

20nC maximum gate charge at 10V

Operates in the temperature range of -55°C to 175°C

Product Advantages

Optimized for high-efficiency power conversion

Robust design for automotive and industrial environments

Low on-resistance for reduced power losses

Logic-level gate for easy implementation in control circuits

Key Technical Parameters

MOSFET technology

N-channel configuration

Dual FET array in PG-TDSON-8-10 package

Tape and reel packaging

Quality and Safety Features

AEC-Q101 qualified for automotive applications

RoHS3 compliant

Compatibility

Suitable for use in a wide range of power conversion and control applications

Application Areas

Automotive electronics (e.g., motor drives, power supplies)

Industrial power electronics (e.g., inverters, converters)

General-purpose power switching and control

Product Lifecycle

This product is an active and widely available part in Infineon's OptiMOS series.

Replacement or upgrade options may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent performance-to-size ratio for efficient power conversion

Robust design for reliable operation in demanding environments

Easy integration into control circuits with logic-level gate

Proven reliability and quality through AEC-Q101 qualification

Wide availability and ongoing support from Infineon Technologies