Manufacturer Part Number
IPG20N10S4L22AATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance dual N-channel MOSFET in PowerVDFN package
Designed for high-efficiency power conversion applications
Product Features and Performance
100V drain-to-source voltage
22mΩ maximum on-resistance
20A continuous drain current
Low gate charge and input capacitance for fast switching
Logic-level gate drive
Wide operating temperature range: -55°C to 175°C
Product Advantages
Excellent efficiency and thermal performance
Compact and space-saving PowerVDFN package
Suitable for high-power density designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
On-Resistance (RDS(on)): 22mΩ
Continuous Drain Current (ID): 20A
Input Capacitance (Ciss): 1755pF
Gate Charge (Qg): 27nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Widely used in power conversion, motor control, and other power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Product Lifecycle
Current product, no discontinuation planned
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact and space-saving package
Suitable for high-power density designs
Wide operating temperature range
Reliable and RoHS3 compliant