IPG20N06S4L11ATMA1 - Infineon Technologies

Manufacturer Part Number

IPG20N06S4L11ATMA1

Manufacturer

Infineon Technologies

Introduction

Infineon's IPG20N06S4L11ATMA1 is a dual N-channel MOSFET designed for automotive and industrial applications. It is part of the Automotive OptiMOS series.

Product Features and Performance

60V Drain-to-Source Voltage

20A Continuous Drain Current

2 mΩ Maximum On-Resistance

4020 pF Maximum Input Capacitance

53 nC Maximum Gate Charge

Logic Level Gate (-10V to 20V)

Wide Operating Temperature Range (-55°C to 175°C)

Designed for Automotive and Industrial Applications

Product Advantages

Optimized for Efficiency and Thermal Performance

Automotive Grade Quality and Reliability

Suitable for High Switching Frequency Applications

Logic Level Gate for Easy Driving

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Continuous Drain Current (Id): 20A

On-Resistance (Rds(on)): 11.2 mΩ

Input Capacitance (Ciss): 4020 pF

Gate Charge (Qg): 53 nC

Gate Threshold Voltage (Vgs(th)): 2.2V

Quality and Safety Features

AEC-Q101 Qualified

ROHS3 Compliant

ESD Protection

Compatibility

Suitable for Automotive and Industrial Applications

Can be used in Power Conversion, Motor Control, and Switching Circuits

Application Areas

Automotive Electronics (e.g., Powertrain, Body Electronics, Infotainment)

Industrial Power Supplies and Motor Drives

Switching Power Supplies

Battery Management Systems

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgraded products may become available in the future.

Several Key Reasons to Choose This Product

Excellent efficiency and thermal performance for automotive and industrial applications

Automotive-grade quality and reliability

Suitable for high switching frequency operations

Logic level gate for easy driving

Wide operating temperature range (-55°C to 175°C)

Compact surface mount package