Manufacturer Part Number
IPD70R600P7SAUMA1
Manufacturer
Infineon Technologies
Introduction
The IPD70R600P7SAUMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
700V Drain-Source Voltage
600mΩ Maximum On-Resistance @ 1.8A, 10V
5A Continuous Drain Current @ 25°C
364pF Maximum Input Capacitance @ 400V
43W Maximum Power Dissipation
Product Advantages
Low on-resistance for efficient power conversion
High voltage operation for various power applications
Compact TO-252-3 package for space-saving designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 700V
Gate-Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 600mΩ
Continuous Drain Current (Id): 8.5A
Input Capacitance (Ciss): 364pF
Quality and Safety Features
RoHS3 compliant
Robust TO-252-3 package
Compatibility
Suitable for surface mount applications
Application Areas
Switching power supplies
Motor drives
Home appliances
Industrial electronics
Product Lifecycle
Currently available
No discontinuation or replacement plans known
Key Reasons to Choose this Product
High voltage handling capability
Low on-resistance for efficient power conversion
Compact surface-mount package for space-saving designs
Robust and reliable performance
IPD70R1K4CEINENOI