Manufacturer Part Number
IPD70R1K4P7SAUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET
Part of the CoolMOS P7 series
Designed for high-efficiency power conversion applications
Product Features and Performance
Drain-source voltage (Vdss) of 700V
On-resistance (Rds(on)) of 1.4 ohms at 700mA and 10V
Continuous drain current (Id) of 4A at 25°C case temperature
Input capacitance (Ciss) of 158pF at 400V
Power dissipation (Ptot) of 23W at 25°C case temperature
Gate charge (Qg) of 4.7nC at 10V
Product Advantages
Excellent efficiency due to low on-resistance
High voltage capability for various power conversion applications
Compact surface mount package (TO-252-3)
Robust design and high reliability
Key Technical Parameters
Drain-source voltage (Vdss): 700V
Gate-source voltage (Vgs): ±16V
On-resistance (Rds(on)): 1.4 ohms
Continuous drain current (Id): 4A
Input capacitance (Ciss): 158pF
Power dissipation (Ptot): 23W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Surface mount (TO-252-3) package
Suitable for various power conversion applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High voltage capability for a wide range of applications
Compact and robust surface mount package
Reliable and safe performance
Compatibility with various power conversion systems
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