Manufacturer Part Number
IPD70P04P4L08ATMA2
Manufacturer
Infineon Technologies
Introduction
The IPD70P04P4L08ATMA2 is a high-performance P-channel MOSFET from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
40V Drain-Source Voltage (Vdss)
70A Continuous Drain Current (Id) at 25°C
8mΩ Maximum On-Resistance (Rds(on)) at 70A and 10V
5430pF Maximum Input Capacitance (Ciss) at 25V
75W Maximum Power Dissipation at Tc
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent on-state resistance for high efficiency
High current handling capability
Robust design for reliable operation
Suitable for various power conversion applications
Key Technical Parameters
P-Channel MOSFET
Vgs(th) (Max) = 2.2V @ 120A
Gate Voltage: +5V/-16V
Drive Voltage: 4.5V (Max Rds(on)), 10V (Min Rds(on))
Gate Charge (Qg) (Max) = 92nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Housed in a PG-TO252-3-313 package
Compatibility
Surface Mount Mounting Type
Compatible with a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design for long-term operation
Suitable for a wide range of power electronics applications
Compliance with industry standards and regulations
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