IPD70R1K4CEAUMA1 - Infineon Technologies

Manufacturer Part Number

IPD70R1K4CEAUMA1

Manufacturer

Infineon Technologies

Introduction

This product is a discrete semiconductor component, specifically a transistor in the form of a field-effect transistor (FET) or metal-oxide-semiconductor field-effect transistor (MOSFET).

Product Features and Performance

N-Channel MOSFET

700V drain-source voltage rating

4Ohm maximum on-resistance at 1A, 10V

4A continuous drain current at 25°C case temperature

225pF maximum input capacitance at 100V

53W maximum power dissipation at Tc

Product Advantages

High voltage and low on-resistance characteristics suitable for power conversion and switching applications

Part of the CoolMOS CE series for improved energy efficiency

Key Technical Parameters

Drain-source voltage (Vdss): 700V

Gate-source voltage (Vgs) max: ±20V

On-resistance (Rds(on)): 1.4Ohm @ 1A, 10V

Continuous drain current (Id): 5.4A @ 25°C case temperature

Input capacitance (Ciss): 225pF @ 100V

Power dissipation (Pd): 53W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-252-3 (D-Pak) surface mount package

Compatibility

Compatible with a variety of power electronics and power conversion applications.

Application Areas

Switch-mode power supplies

Motor drives

Industrial electronics

Lighting ballasts

Home appliances

Product Lifecycle

This product is an active and currently available part from Infineon Technologies. No information is provided about impending discontinuation or availability of replacements/upgrades.

Key Reasons to Choose

High voltage and low on-resistance characteristics

Part of the efficient CoolMOS CE series

Compact surface mount package

RoHS3 compliance for environmental responsibility