Manufacturer Part Number
IPD70R900P7SAUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with CoolMOS P7 technology for efficient power conversion applications
Product Features and Performance
700V drain-source voltage
900mΩ on-resistance at 1.1A and 10V gate-source voltage
Low input capacitance of 211pF at 400V
Capable of handling up to 6A continuous drain current at 25°C
Wide operating temperature range of -40°C to 150°C
Product Advantages
Improved efficiency and reduced power losses through CoolMOS P7 technology
Compact and thermally-efficient TO-252-3 package
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 700V
Gate-source voltage (Vgs): ±16V
On-resistance (Rds(on)): 900mΩ @ 1.1A, 10V
Drain current (Id): 6A (Tc)
Input capacitance (Ciss): 211pF @ 400V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications such as power supplies, motor drives, and industrial electronics
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology progresses.
Key Reasons to Choose This Product
Excellent efficiency and low power losses through advanced CoolMOS P7 technology
Compact and thermally-efficient package for space-constrained applications
Wide operating temperature range and high voltage capabilities
Proven reliability and quality from a leading semiconductor manufacturer
