Manufacturer Part Number
IPD70R950CEAUMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel MOSFET with CoolMOS CE technology for high-efficiency power conversion applications
Product Features and Performance
700V breakdown voltage
Low on-resistance of 950mΩ
High continuous drain current of 7.4A at 25°C
Low input capacitance of 328pF
Wide operating temperature range of -40°C to 150°C
Compact TO-252-3 (D-Pak) package
Product Advantages
High efficiency due to low conduction and switching losses
Compact design with high power density
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vds): 700V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 950mΩ @ 1.5A, 10V
Continuous Drain Current (Id): 7.4A at 25°C
Input Capacitance (Ciss): 328pF @ 100V
Power Dissipation (Pd): 68W at Tc
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Compatible with various power conversion applications, such as solar inverters, switch-mode power supplies, and motor drives
Application Areas
High-efficiency power conversion
Renewable energy systems
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely used device in the market
Replacements and upgrades are readily available from Infineon Technologies
Key Reasons to Choose This Product
High efficiency and low power losses due to CoolMOS CE technology
Compact and reliable design in the TO-252-3 package
Wide operating temperature range and robust performance
Suitable for a variety of high-voltage power conversion applications
Supported by Infineon's extensive product portfolio and technical expertise
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