Manufacturer Part Number
IPD78CN10NG
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in TO-252-3 package
Product Features and Performance
100V drain-source voltage
78mOhm on-resistance at 13A, 10V gate voltage
13A continuous drain current at 25°C
716pF maximum input capacitance at 50V
31W maximum power dissipation at Tc
Product Advantages
Improved efficiency and heat dissipation
Optimized for high-frequency switching applications
Robust and reliable design
Key Technical Parameters
Voltage rating: 100V drain-source voltage
On-resistance: 78mOhm
Drain current: 13A continuous at 25°C
Input capacitance: 716pF maximum
Power dissipation: 31W maximum
Quality and Safety Features
Designed for high reliability and long lifespan
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting and industrial control systems
Product Lifecycle
Current production model, no discontinuation planned
Upgrades and replacements available as technology advances
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High efficiency and thermal management
Robust and reliable design for demanding applications
Compatibility with a wide range of power electronics systems
IPD7ON10S3L-12AMI Semiconductor/onsemi