Manufacturer Part Number
IPD80N04S3-06
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor designed for efficient power conversion and control applications.
Product Features and Performance
High power density and low on-resistance for efficient power conversion
Optimized for high-frequency switching
Wide operating temperature range of -55°C to 175°C
Low gate charge and fast switching for high efficiency
Robust and reliable design for industrial and automotive applications
Product Advantages
Excellent thermal management and power dissipation
Efficient power conversion with low losses
Reliable and durable performance
Suitable for high-frequency, high-current switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.2mΩ @ 80A, 10V
Continuous Drain Current (Id): 90A @ 25°C
Input Capacitance (Ciss): 3250pF @ 25V
Power Dissipation (Tc): 100W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial and automotive use
Compatibility
Surface mount package (TO-252-3, DPak)
Suitable for high-frequency, high-current power conversion applications
Application Areas
Switchmode power supplies
Motor drives
Power inverters
Automotive electronics
Industrial automation
Product Lifecycle
Currently in production
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Reliable and durable operation in demanding applications
Optimized for high-frequency, high-current switching
Excellent thermal management and power handling capabilities
Wide operating temperature range for versatile use