Manufacturer Part Number
IPD65R600E6
Manufacturer
Infineon Technologies
Introduction
The IPD65R600E6 is a high-performance N-channel MOSFET transistor designed for a wide range of power electronics and switch-mode power supply applications.
Product Features and Performance
650V drain-to-source voltage rating
600mΩ maximum on-resistance at 2.1A, 10V
3A continuous drain current at 25°C case temperature
440pF maximum input capacitance at 100V
63W maximum power dissipation at 25°C case temperature
Supports operating temperatures from -55°C to 150°C
Product Advantages
High voltage and low on-resistance for efficient power conversion
Small package size and surface mount design for compact PCB layouts
Robust performance across a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ
Continuous Drain Current (Id): 7.3A
Input Capacitance (Ciss): 440pF
Power Dissipation: 63W
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Tested and qualified to meet stringent quality and reliability standards
Compatibility
TO-252-3 (D-Pak) package is widely used in power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial power electronics
Lighting and power conversion systems
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded options may be available in the future as technology advances
Key Reasons to Choose
Excellent power handling and efficiency for high-voltage applications
Small and compact package for space-constrained designs
Reliable performance across a wide temperature range
RoHS compliance for environmentally-friendly applications
