Manufacturer Part Number
IPD65R380E6
Manufacturer
Infineon Technologies
Introduction
The IPD65R380E6 is a high-performance N-channel MOSFET transistor from Infineon Technologies' CoolMOS E6 series.
Product Features and Performance
650V drain to source voltage
380mΩ maximum ON-state resistance
6A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge and input capacitance for high-speed switching
Optimized for hardand soft-switching topologies
Product Advantages
Improved efficiency and reduced power losses
Reduced cooling requirements
Compact design and easy integration
Key Technical Parameters
650V drain to source voltage
±20V maximum gate-source voltage
380mΩ maximum ON-state resistance
710pF maximum input capacitance
83W maximum power dissipation
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with various power supply and converter designs
Application Areas
Switch-mode power supplies
Power inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product offering
No known plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High efficiency and low power losses
Robust and reliable performance
Compact design and easy integration
Suitable for a wide range of power conversion applications
Backed by Infineon's expertise and quality standards
