Manufacturer Part Number
IPD65R250E6
Manufacturer
Infineon Technologies
Introduction
The IPD65R250E6 is a high-performance N-Channel MOSFET from Infineon Technologies' CoolMOS E6 series. This device is designed for a wide range of power conversion applications.
Product Features and Performance
650V drain-to-source voltage rating
250mΩ maximum on-resistance at 4.4A, 10V
1A continuous drain current at 25°C case temperature
950pF maximum input capacitance at 100V
208W maximum power dissipation at Tc
-55°C to 150°C operating temperature range
Product Advantages
Improved energy efficiency due to low on-resistance
High blocking voltage capability
Compact TO-252 (D-Pak) package
Key Technical Parameters
Vdss: 650V
Vgs(max): ±20V
Rds(on): 250mΩ @ 4.4A, 10V
Id (continuous): 16.1A @ 25°C (Tc)
Ciss: 950pF @ 100V
Pd (max): 208W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
The IPD65R250E6 is compatible with a wide range of power conversion and control circuits.
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
The IPD65R250E6 is an active product and is not nearing discontinuation. Replacements and upgrades are available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent energy efficiency due to low on-resistance
High voltage capability for a wide range of applications
Compact and reliable TO-252 package
Suitable for high-reliability power conversion systems
Broad compatibility and availability from a trusted manufacturer
