Manufacturer Part Number
IPD65R225C7ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-Channel MOSFET from Infineon Technologies' CoolMOS C7 series. It is designed for power switching applications.
Product Features and Performance
High voltage rating of 650V
Low on-resistance of 225mOhm
Continuous drain current of 11A at 25°C
Wide temperature range of -55°C to 150°C
Low input capacitance of 996pF
Maximum power dissipation of 63W
Product Advantages
Excellent efficiency and low switching losses
Improved thermal management
Compact and easy to integrate design
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 225mOhm
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 996pF
Power Dissipation (Ptot): 63W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
This MOSFET is compatible with a wide range of power electronic applications.
Application Areas
Switched-mode power supplies
Motor drives
Power inverters
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is an active and currently available component from Infineon Technologies. There are no plans for discontinuation, and replacement or upgrade options are available.
Key Reasons to Choose This Product
High efficiency and low switching losses
Excellent thermal management capabilities
Compact and easy to integrate design
Reliable and robust performance
Wide range of compatible applications