Manufacturer Part Number
IPD65R650CEAUMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
CoolMOS CE Series
Tape & Reel (TR) Packaging
-40°C ~ 150°C Operating Temperature Range
650V Drain to Source Voltage
±20V Vgs (Max)
650mOhm Rds On (Max) @ 2.1A, 10V
MOSFET (Metal Oxide) Technology
7A Continuous Drain Current (Id) @ 25°C
440pF Input Capacitance (Ciss) (Max) @ 100V
86W Power Dissipation (Max)
N-Channel FET Type
5V Vgs(th) (Max) @ 210A
10V Drive Voltage (Max Rds On, Min Rds On)
23nC Gate Charge (Qg) (Max) @ 10V
Surface Mount Mounting Type
Product Advantages
High voltage and low on-resistance performance
Excellent thermal management
Compact and efficient design
Key Technical Parameters
Drain to Source Voltage
Vgs (Max)
Rds On (Max)
Continuous Drain Current
Input Capacitance
Power Dissipation
Quality and Safety Features
RoHS3 Compliant
Reliable and Robust Design
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
High voltage and low on-resistance performance for efficient power conversion
Excellent thermal management for reliable operation
Compact and efficient design for space-constrained applications
Proven reliability and safety features
Suitable for a wide range of power electronics and industrial applications
