Manufacturer Part Number
IPD65R660CFD
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with CoolMOS CFD2 technology
Product Features and Performance
650V drain-source voltage
660mΩ maximum on-resistance at 2.1A, 10V
6A continuous drain current at 25°C
615pF maximum input capacitance at 100V
5W maximum power dissipation at Tc
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable design
Wide operating temperature range (-55°C to 150°C)
Key Technical Parameters
Vdss: 650V
Vgs (max): ±20V
Rds(on) (max): 660mΩ @ 2.1A, 10V
Id (continuous): 6A @ 25°C
Ciss (max): 615pF @ 100V
Ptot (max): 62.5W @ Tc
Quality and Safety Features
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
Designed for high reliability and long lifespan
Compatibility
Compatible with a wide range of power supply and motor drive applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Current production model, no plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and low switching losses for improved system performance
Robust and reliable design for long-term operation
Wide operating temperature range for use in diverse environments
Compact and surface-mount package for easy integration into PCBs
