Manufacturer Part Number
IPB200N15N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in TO-263 package
Product Features and Performance
Drain-to-source voltage up to 150V
Low on-resistance of 20mOhm @ 50A, 10V
High continuous drain current of 50A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge of 31nC @ 10V
Product Advantages
Optimized for high-efficiency power conversion applications
Excellent thermal performance in TO-263 package
Robust design with high avalanche energy capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 20mOhm @ 50A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 1820pF @ 75V
Power Dissipation (Tc): 150W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount package (TO-263-3)
Suitable for a wide range of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Product Lifecycle
This product is an active and widely used part in the Infineon portfolio
Replacements and upgrades are readily available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for power conversion applications
Robust design with high avalanche energy capability
Optimized thermal performance in the TO-263 package
Proven reliability and quality from Infineon Technologies