Manufacturer Part Number
IPB200N15N3G
Manufacturer
Infineon Technologies
Introduction
The IPB200N15N3G is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Supports continuous drain current up to 50A at 25°C
Operates over a wide temperature range of -55°C to 175°C
Extremely low on-resistance (RDS(on)) of 20 milliohms
High blocking voltage capability of 150V
Fast switching characteristics with low gate charge (Qg) of 31 nC
Product Advantages
Excellent power efficiency due to low RDS(on)
Robust and reliable performance over a wide temperature range
Suitable for high-power, high-frequency switching applications
Compact DPak (TO-263) surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 150V
Gate-to-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 50A at 25°C
On-Resistance (RDS(on)): 20 milliohms
Input Capacitance (Ciss): 1820 pF
Power Dissipation (Pd): 150W
Quality and Safety Features
Manufactured using Infineon's advanced MOSFET technology
Robust and reliable design for long-term performance
Compliant with relevant safety and environmental standards
Compatibility
Suitable for use in a wide range of power electronics applications
Can be used as a replacement or upgrade for similar MOSFET devices
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and widely available
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power efficiency and low conduction losses
Robust and reliable performance over a wide temperature range
Compact and space-saving surface-mount package
Suitable for high-power, high-frequency switching applications
Manufactured by a reputable and trusted semiconductor company
IPB180P04P4L-02Cypress Semiconductor (Infineon Technologies)