Manufacturer Part Number
IPB180N10S403ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET for automotive and industrial applications
Product Features and Performance
100V drain-to-source voltage
180A continuous drain current at 25°C
Ultra-low on-resistance of 3.3mΩ
Fast switching speed
High power density and efficiency
Excellent thermal properties
Product Advantages
Optimized for high efficiency and high power density
Robust design for demanding automotive and industrial environments
Superior thermal management for high power applications
Reliable and long-lasting performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.3mΩ @ 100A, 10V
Continuous drain current (Id): 180A at 25°C
Input capacitance (Ciss): 10,120pF @ 25V
Power dissipation (Tc): 250W
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Robust and reliable design for demanding environments
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive power electronics (e.g., motor drives, power converters)
Industrial power electronics (e.g., motor drives, power supplies)
Renewable energy systems (e.g., solar inverters, wind turbine converters)
Product Lifecycle
Currently available, no plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power applications
Robust and reliable design for demanding environments
Optimized for high power density and thermal management
Comprehensive automotive and industrial qualifications
Long-term availability and support from a reputable manufacturer
IPB180N10S4-03INF