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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~IPB180N10S402ATMA1~~

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IPB180N10S402ATMA1 - Infineon Technologies

Manufacturer Part Number: IPB180N10S402ATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IPB180N10S402ATMA1

ECAD Model

Parts Description: MOSFET N-CH 100V 180A TO263-7

Detailed Description

Package: TO-263-7, D²Pak (6 Leads + Tab)

Data sheet: ~~IPB180N10S402ATMA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 7369

Specifications

IPB180N10S402ATMA1 Tech Specifications
Infineon Technologies - IPB180N10S402ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB180N10S402ATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.5V @ 275µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-7-3
Series	Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs	2.5mOhm @ 100A, 10V
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	14600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Base Product Number	IPB180

Parts Introduction

Manufacturer Part Number

IPB180N10S402ATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor

Designed for automotive and industrial applications

Product Features and Performance

Operates at high temperatures up to 175°C

Low on-resistance for efficient power conversion

Fast switching speed for high-frequency operation

High input capacitance and gate charge for robust performance

Product Advantages

Optimized for automotive and industrial use

Compliant with AEC-Q101 automotive qualification standard

Capable of handling high currents up to 180A

Key Technical Parameters

Drain-source voltage (Vdss): 100V

On-resistance (Rds(on)): 2.5mΩ

Continuous drain current (Id): 180A

Input capacitance (Ciss): 14,600pF

Power dissipation (Ptot): 300W

Quality and Safety Features

RoHS3 compliant

Certified for automotive applications

Compatibility

Suitable for a wide range of automotive and industrial power conversion applications

Application Areas

Electric vehicles and hybrid electric vehicles

Industrial motor drives and power supplies

Renewable energy systems

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

Excellent performance and efficiency for high-power automotive and industrial applications

Robust design and AEC-Q101 qualification for reliable operation in harsh environments

High current and power handling capabilities

Optimized switching characteristics for high-frequency operation

Extensive application support and product availability from Infineon Technologies

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB180N10S402ATMA1

Product Attribute
Part Number	IPB180N10S402ATMA1	IPB180P04P4L02ATMA1	IPB180N10S403ATMA1	IPB200N15N3
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)	10V	4.5V, 10V	10V	8V, 10V
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V	286 nC @ 10 V	140 nC @ 10 V	31 nC @ 10 V
Vgs (Max)	±20V	±16V	±20V	±20V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)	180A (Tc)	180A (Tc)	50A (Tc)
FET Feature	-	-	-	-
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Bulk
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.5mOhm @ 100A, 10V	2.4mOhm @ 100A, 10V	3.3mOhm @ 100A, 10V	20mOhm @ 50A, 10V
Base Product Number	IPB180	IPB180	IPB180	-
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)	TO-263-7, D²Pak (6 Leads + Tab)	TO-263-7, D²Pak (6 Leads + Tab)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type	N-Channel	P-Channel	N-Channel	N-Channel
Power Dissipation (Max)	300W (Tc)	150W (Tc)	250W (Tc)	150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds	14600 pF @ 25 V	18700 pF @ 25 V	10120 pF @ 25 V	1820 pF @ 75 V
Drain to Source Voltage (Vdss)	100 V	40 V	100 V	150 V
Series	Automotive, AEC-Q101, OptiMOS™	OptiMOS™	Automotive, AEC-Q101, OptiMOS™	OptiMOS™ 3
Supplier Device Package	PG-TO263-7-3	PG-TO263-7-3	PG-TO263-7-3	PG-TO263-3-2
Vgs(th) (Max) @ Id	3.5V @ 275µA	2.2V @ 410µA	3.5V @ 180µA	4V @ 90µA

IPB180N10S402ATMA1 Datasheet PDF

Download IPB180N10S402ATMA1 pdf datasheets and Infineon Technologies documentation for IPB180N10S402ATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf
PCN Obsolescence/ EOL: Mult Dev Assembly Chg 4/Oct/2018.pdf

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America	Brazil	7
Europe	Germany	5
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Oceania	Australia	6
Oceania	New Zealand	5
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1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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