Manufacturer Part Number
IPB180P04P4L02ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel MOSFET transistor designed for efficient power conversion applications
Product Features and Performance
High current capability up to 180A (at 25°C case temperature)
Ultra-low on-resistance down to 2.4mΩ
Fast switching speeds with low gate charge of 286nC
Wide operating temperature range of -55°C to 175°C
High power dissipation capability of 150W (at 25°C case temperature)
Product Advantages
Excellent efficiency and low power losses
Compact and space-saving design
Reliable high-temperature operation
Optimized for high-power switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate to Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 2.4mΩ @ 100A, 10V
Input Capacitance (Ciss): 18700pF @ 25V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide temperature range
Compatibility
Surface mount package (TO-263-7, DPak)
Suitable for a variety of power conversion applications
Application Areas
High-efficiency power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Exceptional power efficiency and low losses
Compact and space-saving design
Reliable high-temperature operation
Optimized for high-power switching applications
Proven Infineon quality and performance