Manufacturer Part Number
IPB200N25N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance, high-efficiency N-Channel MOSFET transistor
Product Features and Performance
High drain-source voltage of 250V
Low on-resistance of 20mOhm
High continuous drain current of 64A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching speed
Optimized for efficient power conversion applications
Product Advantages
Excellent thermal performance and power dissipation
Robust and reliable design
Optimized for high-frequency, high-power switching applications
Compact and space-saving package
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 20mOhm
Continuous Drain Current (Id): 64A
Input Capacitance (Ciss): 7100pF
Power Dissipation (Tc): 300W
Quality and Safety Features
ROHS3 compliant
Meets high quality and reliability standards
Compatibility
Compatible with various power conversion and switching applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Solar inverters
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and available for purchase
Replacement and upgrade options are available if required in the future
Several Key Reasons to Choose This Product
Excellent performance and efficiency for high-power, high-frequency applications
Robust and reliable design for long-lasting operation
Compact package for space-saving integration
Meets high quality and safety standards
Broad compatibility and suitability for various power conversion applications
IPB200N15NINFINEO