Manufacturer Part Number
IPB025N10N3GATMA1
Manufacturer
Infineon Technologies
Introduction
The IPB025N10N3GATMA1 is a high-performance N-channel MOSFET from Infineon Technologies. It is part of the OptiMOS series and designed for use in a variety of power conversion and control applications.
Product Features and Performance
100V drain-to-source voltage rating
-55°C to 175°C operating temperature range
Low on-resistance of 2.5 milliohms at 100A, 10V
High current capability of 180A continuous drain current at 25°C
Low input capacitance of 14,800pF at 50V
High power dissipation of 300W at Tc
Product Advantages
Excellent efficiency and low power losses
Robust and reliable performance
Suitable for high-current, high-power applications
Optimized for fast switching and low EMI
Key Technical Parameters
Vdss: 100V
Vgs(max): ±20V
Rds(on) (max): 2.5 milliohms @ 100A, 10V
Id (continuous): 180A @ 25°C
Ciss (max): 14,800pF @ 50V
Pd (max): 300W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with standard TO-263-7 (DPak) package
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation
Electric vehicle systems
Renewable energy systems
Product Lifecycle
The IPB025N10N3GATMA1 is an active product and is not nearing discontinuation. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and low power losses for improved system performance
High current capability and low on-resistance for high-power applications
Robust and reliable performance over a wide temperature range
Optimized for fast switching and low EMI for improved system design
RoHS3 compliance and AEC-Q101 qualification for quality and safety
IPB026N06N3G 026N06NCypress Semiconductor (Infineon Technologies)