Manufacturer Part Number
IPB027N10N3GATMA1
Manufacturer
Infineon Technologies
Introduction
This is a single N-channel MOSFET transistor from Infineon's OptiMOS series, designed for high-power applications.
Product Features and Performance
100V drain-to-source voltage rating
120A continuous drain current at 25°C
Low on-resistance of 2.7 milliohms at 100A, 10V
Wide operating temperature range of -55°C to 175°C
High power dissipation capability of 300W at case temperature
Fast switching with low gate charge of 206nC at 10V
Product Advantages
Excellent efficiency and thermal performance
Optimized for high-power, high-current applications
Robust design with high reliability
Ease of use with standard MOSFET gate drive requirements
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.7 milliohms
Continuous drain current (Id): 120A
Input capacitance (Ciss): 14,800 pF
Gate charge (Qg): 206 nC
Quality and Safety Features
RoHS3 compliant
Qualified to automotive and industrial standards
Compatibility
Compatible with standard MOSFET gate drive circuits
Application Areas
High-power inverters and converters
Electric vehicle traction and on-board chargers
Industrial motor drives
Switched-mode power supplies
Product Lifecycle
This product is an active and widely available part
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Robust and reliable design for demanding environments
Easy to integrate with standard MOSFET gate drive requirements
Wide range of applications in industrial, automotive, and power electronics
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