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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~IPB027N10N5ATMA1~~

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IPB027N10N5ATMA1 - Infineon Technologies

Manufacturer Part Number: IPB027N10N5ATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IPB027N10N5ATMA1

ECAD Model

Parts Description: MOSFET N-CH 100V 120A D2PAK

Detailed Description

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Data sheet: ~~IPB027N10N5ATMA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 10173

Specifications

IPB027N10N5ATMA1 Tech Specifications
Infineon Technologies - IPB027N10N5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB027N10N5ATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.8V @ 184µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V
Power Dissipation (Max)	250W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	10300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Base Product Number	IPB027

Parts Introduction

Manufacturer Part Number

IPB027N10N5ATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET for power switching applications

Product Features and Performance

100V drain-source voltage rating

Low on-resistance of 2.7mΩ @ 100A, 10V

Continuous drain current of 120A at 25°C case temperature

Fast switching performance with low gate charge of 139nC @ 10V

Wide operating temperature range of -55°C to 175°C

Optimized for high-efficiency power conversion

Product Advantages

Excellent power density and efficiency

High reliability and robustness

Suitable for a wide range of power applications

Key Technical Parameters

Drain-source voltage (Vdss): 100V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 2.7mΩ @ 100A, 10V

Drain current (Id): 120A @ 25°C case temperature

Input capacitance (Ciss): 10300pF @ 50V

Power dissipation (Pd): 250W @ 25°C case temperature

Quality and Safety Features

RoHS3 compliant

Certified for industrial and automotive applications

Compatibility

Surface mount package (PG-TO263-3) for high-density PCB design

Application Areas

High-efficiency power conversion in industrial, automotive, and consumer electronics applications

Switched-mode power supplies, motor drives, and other power management systems

Product Lifecycle

Current product, no discontinuation or replacement planned

Several Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Optimized for high-efficiency power conversion

Robust and reliable design for industrial and automotive applications

Compatibility with high-density PCB design

Widespread availability and support from a reputable manufacturer

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB027N10N5ATMA1

Product Attribute
Part Number	IPB027N10N5ATMA1	IPB029N06N3GATMA1	IPB031N08N5ATMA1	IPB026N06NATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Power Dissipation (Max)	250W (Tc)	188W (Tc)	167W (Tc)	3W (Ta), 136W (Tc)
FET Feature	-	-	-	-
Supplier Device Package	PG-TO263-3	PG-TO263-3	PG-TO263-3	PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	10V	6V, 10V	6V, 10V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 10 V	165 nC @ 10 V	87 nC @ 10 V	56 nC @ 10 V
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Series	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	120A (Tc)	120A (Tc)	120A (Tc)	25A (Ta), 100A (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V	2.9mOhm @ 100A, 10V	3.1mOhm @ 100A, 10V	2.6mOhm @ 100A, 10V
Vgs (Max)	±20V	±20V	±20V	±20V
Vgs(th) (Max) @ Id	3.8V @ 184µA	4V @ 118µA	3.8V @ 108µA	2.8V @ 75µA
Input Capacitance (Ciss) (Max) @ Vds	10300 pF @ 50 V	13000 pF @ 30 V	6240 pF @ 40 V	4100 pF @ 30 V
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Drain to Source Voltage (Vdss)	100 V	60 V	80 V	60 V
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Base Product Number	IPB027	IPB029	IPB031	IPB026

IPB027N10N5ATMA1 Datasheet PDF

Download IPB027N10N5ATMA1 pdf datasheets and Infineon Technologies documentation for IPB027N10N5ATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf
PCN Assembly/Origin: OptiMOS A/T Chgs 2/Dec/2021.pdf

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Oceania	Australia	6
Oceania	New Zealand	5
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