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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~IPB031N08N5ATMA1~~

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IPB031N08N5ATMA1 - Infineon Technologies

Manufacturer Part Number: IPB031N08N5ATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IPB031N08N5ATMA1

ECAD Model

Parts Description: MOSFET N-CH 80V 120A D2PAK

Detailed Description

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Data sheet: ~~IPB031N08N5ATMA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 17744

Specifications

IPB031N08N5ATMA1 Tech Specifications
Infineon Technologies - IPB031N08N5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB031N08N5ATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.8V @ 108µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	3.1mOhm @ 100A, 10V
Power Dissipation (Max)	167W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	6240 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Base Product Number	IPB031

Parts Introduction

Manufacturer Part Number

IPB031N08N5ATMA1

Manufacturer

Infineon Technologies

Introduction

This is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.

Product Features and Performance

80V drain-source voltage rating

-55°C to 175°C operating temperature range

1mΩ maximum on-resistance at 100A, 10V

120A continuous drain current at 25°C case temperature

6,240pF maximum input capacitance at 40V

167W maximum power dissipation at Tc

Product Advantages

Excellent on-resistance performance for high-efficiency power conversion

Wide operating temperature range suitable for demanding applications

High current handling capability in a compact TO-263 package

Key Technical Parameters

N-channel MOSFET

±20V maximum gate-source voltage

8V maximum gate threshold voltage at 108A

6V to 10V drive voltage range

Quality and Safety Features

RoHS3 compliant

PG-TO263-3 package

Compatibility

Suitable for a variety of power conversion and control applications.

Application Areas

Switch-mode power supplies

Motor drives

Industrial automation and control

Automotive electronics

Product Lifecycle

This product is currently in production and widely available. Infineon continues to develop and release newer generations of OptiMOS devices, but this model remains a popular choice.

Key Reasons to Choose This Product

Excellent on-resistance performance for high-efficiency power conversion

Wide operating temperature range suitable for demanding applications

High current handling capability in a compact package

Proven reliability and quality from Infineon Technologies

Compatibility with a wide range of power conversion and control applications

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB031N08N5ATMA1

Product Attribute
Part Number	IPB031N08N5ATMA1	IPB032N10N5ATMA1	IPB029N06N3GATMA1	IPB027N10N5ATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Vgs(th) (Max) @ Id	3.8V @ 108µA	3.8V @ 125µA	4V @ 118µA	3.8V @ 184µA
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
FET Feature	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	6V, 10V	10V	6V, 10V
Base Product Number	IPB031	IPB032	IPB029	IPB027
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3	PG-TO263-7	PG-TO263-3	PG-TO263-3
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	6240 pF @ 40 V	6970 pF @ 50 V	13000 pF @ 30 V	10300 pF @ 50 V
Vgs (Max)	±20V	±20V	±20V	±20V
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V	95 nC @ 10 V	165 nC @ 10 V	139 nC @ 10 V
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	3.1mOhm @ 100A, 10V	3.2mOhm @ 83A, 10V	2.9mOhm @ 100A, 10V	2.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)	166A (Tc)	120A (Tc)	120A (Tc)
Power Dissipation (Max)	167W (Tc)	187W (Tc)	188W (Tc)	250W (Tc)
Series	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)	80 V	100 V	60 V	100 V

IPB031N08N5ATMA1 Datasheet PDF

Download IPB031N08N5ATMA1 pdf datasheets and Infineon Technologies documentation for IPB031N08N5ATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf
PCN Assembly/Origin: OptiMOS A/T Chgs 2/Dec/2021.pdf

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