Manufacturer Part Number
IPB031NE7N3G
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET transistor from Infineon Technologies' OptiMOS 3 series.
Product Features and Performance
Operates at high temperatures up to 175°C
Supports high drain-to-source voltage up to 75V
Very low on-resistance of 3.1mΩ at 100A, 10V
High continuous drain current of 100A at 25°C
Efficient power handling with max power dissipation of 214W
Fast switching with low gate charge of 117nC at 10V
Product Advantages
Excellent thermal and electrical performance
Highly efficient power conversion
Reliable operation in demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.1mΩ @ 100A, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 8130pF @ 37.5V
Power Dissipation: 214W @ Tc
Quality and Safety Features
Qualified to AEC-Q101 standard for automotive use
Robust design for reliable long-term operation
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Automotive power management
Industrial motor drives
Switch-mode power supplies
Frequency converters
DC-DC converters
Product Lifecycle
This product is an active part of Infineon's OptiMOS 3 series. No discontinuation or replacement is currently planned.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable high-temperature operation
Automotive-qualified for demanding applications
Well-suited for power conversion and motor control
Part of Infineon's extensive and supported MOSFET portfolio
