Manufacturer Part Number
IPB025N08N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching capabilities.
Product Features and Performance
Drain to Source Voltage (Vdss) of 80V
Extremely low on-resistance (Rds(on)) of 2.5mΩ at 100A and 10V
Continuous Drain Current (Id) of 120A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching with Gate Charge (Qg) of 206nC at 10V
Low input capacitance (Ciss) of 14200pF at 40V
Product Advantages
Excellent power efficiency due to low on-resistance
Robust and reliable performance across wide temperature range
Enables compact and high-density power circuit designs
Key Technical Parameters
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 270A
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Power Dissipation (Max): 300W at Tc
Quality and Safety Features
ROHS3 compliant
Qualified for industrial and automotive applications
Compatibility
Compatible with various power circuit designs and topologies
Application Areas
Suitable for high-power motor drives, power supplies, inverters, and other high-current, high-voltage power conversion applications
Product Lifecycle
The IPB025N08N3GATMA1 is an active product, with no plans for discontinuation. Upgrades and replacements may become available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and low losses due to ultra-low on-resistance
Robust and reliable performance across wide temperature range
Enables compact and high-density power circuit designs
Proven track record in industrial and automotive applications
Availability and long-term support from a trusted manufacturer, Infineon Technologies
