Manufacturer Part Number
IPB024N10N5ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET with low on-resistance for high-power applications
Product Features and Performance
Low on-resistance (RDS(on) = 2.4 mΩ) for high efficiency
High current capability (180 A continuous drain current at 25°C)
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg = 138 nC) for fast switching
Low input capacitance (Ciss = 10,200 pF) for high-frequency operation
Product Advantages
Excellent thermal performance for high-power applications
Fast switching for high-efficiency power conversion
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (VDS): 100 V
Gate-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 180 A at 25°C (Tc)
Power Dissipation (Pd): 250 W at 25°C (Tc)
On-Resistance (RDS(on)): 2.4 mΩ at 90 A, 10 V
Input Capacitance (Ciss): 10,200 pF at 50 V
Gate Charge (Qg): 138 nC at 10 V
Quality and Safety Features
Compliant with RoHS3 directive
Reliable and robust design for industrial applications
Compatibility
Suitable for a wide range of high-power applications, including motor drives, power supplies, and industrial automation
Application Areas
High-power motor drives
Switching power supplies
Industrial automation and control systems
Renewable energy systems
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent thermal performance and high current capability for high-power applications
Fast switching and low gate charge for high-efficiency power conversion
Robust and reliable design for industrial and automotive applications
Wide operating temperature range for diverse environmental conditions
Compatibility with a wide range of high-power applications
