Manufacturer Part Number
IPB021N06N3G
Manufacturer
Infineon Technologies
Introduction
The IPB021N06N3G is a high-performance N-Channel MOSFET from Infineon Technologies' OptiMOS 3 series, designed for various power conversion and control applications.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
4 mOhm maximum On-Resistance (Rds(on)) at 100A, 10V
120A continuous Drain Current (Id) at 25°C case temperature
250W maximum Power Dissipation (Tc)
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent on-resistance and switching performance
High current handling capability
Robust and reliable design
Suitable for harsh environment applications
Key Technical Parameters
N-Channel MOSFET
MOSFET Technology
PG-TO263-3 package
23,000 pF maximum Input Capacitance (Ciss)
275 nC maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Designed for various power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Automotive electronics
Product Lifecycle
Current product offering
No known plans for discontinuation
Potential replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High current handling capability
Reliable and robust design
Suitable for a wide range of power electronics applications
RoHS3 compliance for environmental friendliness