Manufacturer Part Number
IPB020N08N5ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and high current capability in a TO-263 package.
Product Features and Performance
Very low on-resistance of 2 mΩ at 100 A drain current and 10 V gate-source voltage
High continuous drain current of 120 A at 25°C case temperature
High power dissipation capability of 300 W at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low gate charge of 166 nC at 10 V gate-source voltage
Low input capacitance of 12,100 pF at 40 V drain-source voltage
Product Advantages
Excellent performance-to-size ratio
Robust and reliable design
Suitable for high-power and high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 80 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 2 mΩ @ 100 A, 10 V
Continuous Drain Current (Id): 120 A @ 25°C
Input Capacitance (Ciss): 12,100 pF @ 40 V
Power Dissipation (Pd): 300 W @ 25°C
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Compatible with a wide range of high-power and high-current applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Electric vehicles
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Infineon
Several Key Reasons to Choose This Product
Exceptional performance-to-size ratio
Robust and reliable design for demanding applications
Versatile compatibility across a wide range of high-power and high-current applications
Excellent thermal management capabilities
Compliance with RoHS3 environmental standards
Availability of replacement and upgrade options from the manufacturer
IPB020N08N5AKSA1IC
IPB019N08N3GATMA1Infineon TechnologiesMOSFET N-CH 80V 180A TO263-7