Manufacturer Part Number
IPB020N10N5ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with very low on-resistance for high-efficiency and high-power applications.
Product Features and Performance
Extremely low on-resistance of 2 mΩ at 100 A, 10 V
High current capability of 120 A continuous drain current at 25°C case temperature
Wide operating voltage range up to 100 V
Low gate charge of 210 nC at 10 V for efficient switching
Fast switching speed
Suitable for high-frequency and high-power applications
Product Advantages
Excellent efficiency and thermal performance
Robust and reliable design
Optimized for high-power, high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 2 mΩ at 100 A, 10 V
Continuous Drain Current (Id): 120 A at 25°C
Input Capacitance (Ciss): 15600 pF at 50 V
Power Dissipation: 375 W at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Surface mount package (TO-263-3, DPak)
Compatible with standard MOSFET drivers and control circuits
Application Areas
High-power, high-frequency switching applications
Inverters, motor drives, power supplies, and other high-power electronics
Product Lifecycle
This product is currently in production and actively supported by the manufacturer.
No immediate plans for discontinuation or end-of-life.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Exceptional efficiency and thermal performance
Robust and reliable design for high-power, high-frequency applications
Optimized for high-current and high-voltage operation
Wide operating temperature range of -55°C to 175°C
RoHS3 compliance for environmental responsibility
Availability in surface-mount packaging for easy integration