Manufacturer Part Number
IPB020NE7N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance n-channel MOSFET transistor in a TO-263 (D-Pak) surface mount package.
Product Features and Performance
High power density and efficient performance
Low on-state resistance (RDS(on)) of 2 mΩ
Continuous drain current (ID) of 120 A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Fast switching characteristics
High input capacitance (Ciss) of 14,400 pF
Low gate charge (Qg) of 206 nC
Product Advantages
Excellent thermal performance and power dissipation
Compact and space-saving surface mount package
Reliable and robust design for demanding applications
Optimized for high-efficiency power conversion
Key Technical Parameters
Drain-Source Voltage (VDS): 75 V
Gate-Source Voltage (VGS): ±20 V
On-State Resistance (RDS(on)): 2 mΩ
Continuous Drain Current (ID): 120 A
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
This MOSFET is compatible with a wide range of power electronics applications, including:
Power supplies
Motor drives
Inverters
Converters
Industrial and automotive electronics
Application Areas
High-power switching and amplification
High-efficiency power conversion
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation. Upgrades and replacement options are available for future product planning.
Key Reasons to Choose This Product
Exceptional power density and efficiency
Robust and reliable design for demanding applications
Optimized for high-performance power conversion
Compact surface mount package for space-saving designs
Broad operating temperature range for versatile use
Meets stringent quality and safety standards
IPB020N08N5AKSA1IC