Manufacturer Part Number
IPB024N08N5ATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
OptiMOS Series
Tape & Reel (TR) packaging
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
MOSFET (Metal Oxide) technology
Current Continuous Drain (Id) @ 25°C: 120A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Power Dissipation (Max): 214W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 3.8V @ 154A
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Surface Mount Mounting Type
Product Advantages
Optimized performance and efficiency
Wide operating temperature range
High current and power handling capability
Low on-resistance and gate charge
Key Technical Parameters
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154A
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Wide operating temperature range
Compatibility
Compatible with various electronic circuits and applications
Application Areas
Suitable for high-power, high-efficiency applications such as power supplies, motor drives, and industrial electronics
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
Optimized performance and efficiency
Wide operating temperature range
High current and power handling capability
Low on-resistance and gate charge
RoHS3 compliant
