Manufacturer Part Number
IPB019N08N3GATMA1
Manufacturer
Infineon Technologies
Introduction
The IPB019N08N3GATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for use in power electronics and high-current switching applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 80V
Maximum Vgs of ±20V
Ultra-low on-resistance (Rds(on)) of 1.9mΩ @ 100A, 10V
Continuous Drain Current (Id) of 180A at 25°C
Input Capacitance (Ciss) of 14,200pF @ 40V
Maximum Power Dissipation of 300W at Tc
Product Advantages
Excellent efficiency and low power losses
High current handling capability
Rugged and reliable design
Suitable for a wide range of power applications
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) (Max): 3.5V @ 270A
Drive Voltage (Max Rds(on), Min Rds(on)): 6V, 10V
Gate Charge (Qg) (Max): 206nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long lifespan
Compatibility
Surface mount package (PG-TO263-7)
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacements or upgrades may be available in the future, but the current model remains a solid choice for many applications.
Key Reasons to Choose This Product
Excellent performance characteristics, including ultra-low on-resistance and high current handling
Rugged and reliable design, suitable for demanding power electronics applications
Efficient and energy-saving, with low power losses
Wide operating temperature range of -55°C to 175°C
RoHS3 compliance for environmental responsibility
Surface mount package for ease of integration into various designs