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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~IPB019N06L3GATMA1~~

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IPB019N06L3GATMA1 - Infineon Technologies

Manufacturer Part Number: IPB019N06L3GATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IPB019N06L3GATMA1

ECAD Model

Parts Description: MOSFET N-CH 60V 120A D2PAK

Detailed Description

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Data sheet: ~~IPB019N06L3GATMA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 15958

Specifications

IPB019N06L3GATMA1 Tech Specifications
Infineon Technologies - IPB019N06L3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB019N06L3GATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	2.2V @ 196µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Power Dissipation (Max)	250W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	166 nC @ 4.5 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Base Product Number	IPB019

Parts Introduction

Manufacturer Part Number

IPB019N06L3GATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor for power applications

Product Features and Performance

High current capability up to 120A

Very low on-resistance of 1.9mΩ

Wide operating temperature range of -55°C to 175°C

High power dissipation of 250W

Product Advantages

Excellent thermal management

High efficiency

Reliable operation

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs) Max: ±20V

Input Capacitance (Ciss): 28,000pF

Gate Charge (Qg): 166nC

Quality and Safety Features

RoHS3 compliant

Halogen-free

Compatibility

Suitable for a variety of power electronics applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial automation

Electric vehicles

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Exceptional performance and efficiency

Robust design for reliable operation

Wide range of applications

Backed by Infineon's quality and engineering expertise

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB019N06L3GATMA1

Product Attribute
Part Number	IPB019N06L3GATMA1	IPB017N08N5ATMA1	IPB020N08N5ATMA1	IPB019N08N3GATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	6V, 10V	6V, 10V	6V, 10V
Supplier Device Package	PG-TO263-3	PG-TO263-3	PG-TO263-3	PG-TO263-7
Power Dissipation (Max)	250W (Tc)	375W (Tc)	300W (Tc)	300W (Tc)
Gate Charge (Qg) (Max) @ Vgs	166 nC @ 4.5 V	223 nC @ 10 V	166 nC @ 10 V	206 nC @ 10 V
Base Product Number	IPB019	IPB017	IPB020	IPB019
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-7, D²Pak (6 Leads + Tab)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 30 V	16900 pF @ 40 V	12100 pF @ 40 V	14200 pF @ 40 V
Vgs(th) (Max) @ Id	2.2V @ 196µA	3.8V @ 280µA	3.8V @ 208µA	3.5V @ 270µA
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Current - Continuous Drain (Id) @ 25°C	120A (Tc)	120A (Tc)	120A (Tc)	180A (Tc)
FET Feature	-	-	-	-
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V	1.7mOhm @ 100A, 10V	2mOhm @ 100A, 10V	1.9mOhm @ 100A, 10V
Vgs (Max)	±20V	±20V	±20V	±20V
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Drain to Source Voltage (Vdss)	60 V	80 V	80 V	80 V
Series	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™

IPB019N06L3GATMA1 Datasheet PDF

Download IPB019N06L3GATMA1 pdf datasheets and Infineon Technologies documentation for IPB019N06L3GATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf
PCN Assembly/Origin: OptiMOS Assembly Site Add 2/Jan/2018.pdf

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America	Brazil	7
Europe	Germany	5
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Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

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1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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