Manufacturer Part Number
IPB017N08N5ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
80V Drain-to-Source Voltage (VDS)
120A Continuous Drain Current (ID) at 25°C
7mΩ On-State Resistance (RDS(on)) at 100A, 10V
Wide Operating Temperature Range: -55°C to 175°C
Low Input Capacitance: 16900pF at 40V
High Power Dissipation: 375W at Tc
Product Advantages
Excellent electrical performance for high-power applications
Optimized for efficient power conversion
Robust design for reliable operation
Compact and efficient surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 80V
Gate-to-Source Voltage (VGS): ±20V
Threshold Voltage (VGS(th)): 3.8V at 280A
Drive Voltage Range: 6V to 10V
Gate Charge (Qg): 223nC at 10V
Quality and Safety Features
RoHS3 Compliant
Durable PG-TO263-3 package
Compatibility
This MOSFET is compatible with a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Power conversion and control
Motor drives
Inverters and converters
Industrial and consumer electronics
Product Lifecycle
The IPB017N08N5ATMA1 is an active product from Infineon Technologies. No information is available about its discontinuation or the availability of replacements or upgrades.
Key Reasons to Choose This Product
Excellent electrical performance for high-power applications
Optimized for efficient power conversion
Robust design for reliable operation
Compact and efficient surface-mount package
Wide operating temperature range and high power dissipation capabilities
RoHS3 compliance for environmental sustainability