Manufacturer Part Number
IPA60R180P7XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel CoolMOS P7 MOSFET for efficient power conversion applications.
Product Features and Performance
650V breakdown voltage
Low on-resistance of 180mΩ
High continuous drain current of 18A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1081pF
Maximum power dissipation of 26W
Fast switching with low gate charge of 25nC
Product Advantages
Excellent energy efficiency due to low conduction and switching losses
High power density enabled by high switching frequency
Robust and reliable design for demanding applications
Key Technical Parameters
Drain-Source Voltage (VDS): 650V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 180mΩ
Drain Current (ID): 18A
Input Capacitance (Ciss): 1081pF
Power Dissipation (Ptot): 26W
Quality and Safety Features
ROHS3 compliant
Robust TO-220 package with high thermal performance
Compatibility
Suitable for a wide range of power conversion applications, such as AC/DC and DC/DC converters, motor drives, and renewable energy systems.
Application Areas
Efficient power conversion in industrial, consumer, and automotive applications
High-frequency switching in power supplies and inverters
Motor control and drives
Product Lifecycle
Currently available, no plans for discontinuation
Replacement and upgrade options may be available in the future as technology evolves
Several Key Reasons to Choose This Product
Excellent energy efficiency and power density for high-performance power conversion
Robust and reliable design for demanding applications
Wide operating temperature range and RoHS3 compliance for broad applicability
Proven CoolMOS technology from a trusted manufacturer, Infineon Technologies
