Manufacturer Part Number
IPA60R190E6
Manufacturer
Infineon Technologies
Introduction
The IPA60R190E6 is a high-performance N-channel MOSFET transistor in the CoolMOS series, designed for power switching applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 600V
Low on-resistance (Rds(on)) of 190mΩ at 9.5A and 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1400pF at 100V
Maximum continuous drain current (Id) of 20.2A at 25°C
Product Advantages
Excellent switching performance for efficient power conversion
High voltage handling capability
Robust design for reliable operation
Compact TO-220 package for easy integration
Key Technical Parameters
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 630A
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Power Dissipation (Max): 34W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards for industrial and automotive applications
Compatibility
Compatible with various power supply, motor control, and power conversion applications
Application Areas
Switch-mode power supplies (SMPS)
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
The IPA60R190E6 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent switching performance for efficient power conversion
High voltage handling capability for versatile applications
Robust design and wide operating temperature range for reliable operation
Compact TO-220 package for easy integration into various systems
RoHS3 compliance for environmental responsibility
