Manufacturer Part Number
IPA60R180P7SXKSA1
Manufacturer
Infineon Technologies
Introduction
The IPA60R180P7SXKSA1 is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
600V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
180mOhm Maximum On-Resistance (Rds On) at 5.6A, 10V
18A Continuous Drain Current (Id) at 25°C
1081pF Maximum Input Capacitance (Ciss) at 400V
26W Maximum Power Dissipation at Tc
4V Maximum Gate Threshold Voltage (Vgs(th)) at 280A
25nC Maximum Gate Charge (Qg) at 10V
Product Advantages
High voltage and low on-resistance performance
Suitable for high-power switching applications
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds On): 180mOhm
Continuous Drain Current (Id): 18A
Input Capacitance (Ciss): 1081pF
Power Dissipation: 26W
Gate Threshold Voltage (Vgs(th)): 4V
Gate Charge (Qg): 25nC
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and consumer applications
Compatibility
Through-hole mounting
TO-220-3 package
Application Areas
High-power switching applications
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and low on-resistance performance
Reliable and robust design
Suitable for high-power switching applications
RoHS3 compliant for safety and environmental compliance
Through-hole mounting for ease of installation
