Manufacturer Part Number
IPA60R165CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in a TO-220 package
Part of the CoolMOS series, offering excellent efficiency and performance
Product Features and Performance
600V drain-source voltage
165mΩ maximum on-resistance
21A maximum continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2000pF
Maximum power dissipation of 34W
Product Advantages
Excellent efficiency and performance
High breakdown voltage
Low on-resistance
Robust design and reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 165mΩ @ 12A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 2000pF @ 100V
Quality and Safety Features
RoHS3 compliant
PG-TO220 full pack packaging
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades are available
Key Reasons to Choose This Product
Excellent efficiency and performance
High breakdown voltage
Low on-resistance
Robust design and reliability
RoHS3 compliance
Wide range of applications
