Manufacturer Part Number
IPA60R160P6
Manufacturer
Infineon Technologies
Introduction
The IPA60R160P6 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for use in a wide range of power electronics applications.
Product Features and Performance
600V drain-to-source voltage rating
160mΩ maximum on-resistance
8A continuous drain current at 25°C
-55°C to 150°C operating temperature range
Low input capacitance of 2080pF
34W maximum power dissipation
Fast switching capabilities
Product Advantages
Excellent energy efficiency due to low on-resistance
Reliable and robust design for harsh environments
Suitable for high-voltage, high-current applications
Easy to integrate into power electronics systems
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 160mΩ
Continuous Drain Current (Id): 23.8A
Input Capacitance (Ciss): 2080pF
Power Dissipation (Tc): 34W
Quality and Safety Features
ESD protection
Rugged design for reliable performance
Compliance with relevant safety standards
Compatibility
The IPA60R160P6 is a standard TO-220-3 package MOSFET and is compatible with a wide range of power electronics applications and circuit designs.
Application Areas
Switching power supplies
Motor drives
Power inverters
Industrial electronics
Renewable energy systems
Product Lifecycle
The IPA60R160P6 is an active product in Infineon's portfolio and there are no indications of it being discontinued. Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
Reliable and robust design for industrial applications
Wide operating temperature range for harsh environments
Easy integration into power electronics systems
Proven performance and quality from Infineon Technologies
