Manufacturer Part Number
IPA60R125P6
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET transistor from Infineon Technologies' CoolMOS series, designed for a wide range of power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 600V
Very low on-state resistance (Rds(on)) of 125mΩ
Continuous Drain Current (ID) of 30A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 2660pF
Maximum Power Dissipation of 34W
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable design
Optimized for high-voltage, high-current applications
Reduced energy consumption and heat generation
Key Technical Parameters
N-Channel MOSFET
600V Drain-Source Voltage
125mΩ On-State Resistance
30A Continuous Drain Current
-55°C to 150°C Operating Temperature Range
Quality and Safety Features
Complies with relevant safety and quality standards
Robust construction for reliable performance
Thermally efficient design for improved heat dissipation
Compatibility
Suitable for a wide range of power conversion and control applications
Can be used in various industrial, consumer, and automotive systems
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Solar and wind power systems
Industrial automation and control
Product Lifecycle
This product is currently in active production and not near discontinuation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and low switching losses for improved energy savings
Robust and reliable design for long-term operation in demanding applications
Wide operating temperature range for versatile use in various environments
Optimized for high-voltage, high-current power electronics applications
Proven performance and quality from a trusted manufacturer, Infineon Technologies
