Manufacturer Part Number
IPA60R190P6XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET for power supply and motor control applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 600V
Low on-resistance (RDS(on)) of 190mΩ
Continuous Drain Current (ID) of 20.2A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching capability with low gate charge (Qg) of 37nC
Low input capacitance (Ciss) of 1750pF
Product Advantages
Excellent power efficiency
High power density
Reliable and robust design
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-resistance (RDS(on)): 190mΩ
Continuous Drain Current (ID): 20.2A
Input Capacitance (Ciss): 1750pF
Gate Charge (Qg): 37nC
Power Dissipation (Tc): 34W
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Compatibility
Suitable for power supply, motor control, and other power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial automation equipment
Solar inverters
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Reliable and robust design for industrial and automotive applications
Wide operating temperature range and fast switching capability
Suitable for a variety of power electronics applications
