Manufacturer Part Number
IPA60R230P6
Manufacturer
Infineon Technologies
Introduction
The IPA60R230P6 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power conversion applications.
Product Features and Performance
600V breakdown voltage
230mΩ maximum on-resistance
8A continuous drain current
Wide operating temperature range of -55°C to 150°C
Low gate charge of 31nC
Product Advantages
Excellent efficiency and low switching losses
High power density
Robust and reliable performance
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 230mΩ @ 6.4A, 10V
Continuous Drain Current (Id): 16.8A
Input Capacitance (Ciss): 1450pF @ 100V
Power Dissipation (Ptot): 33W
Quality and Safety Features
MOSFET technology for high reliability and ruggedness
Designed to meet industry safety and quality standards
Compatibility
Suitable for a wide range of power conversion applications, including switch-mode power supplies, motor drives, and more.
Application Areas
Power supplies
Motor drives
Inverters
Power factor correction circuits
Switching power amplifiers
Product Lifecycle
This product is currently in production and widely available.
Infineon offers a range of compatible and more advanced MOSFET options for future product development and upgrades.
Key Reasons to Choose This Product
Excellent efficiency and low switching losses for improved system performance
High power density and robust design for reliable operation
Wide operating temperature range and compatibility with various power conversion applications
Well-established and trusted Infineon technology for quality and safety assurance.
